GaAs MMICs Monolithic Microwave Integrated Circuits
Objective: Design Monolithic Integrated Circuits for Microwave Radios at C, K and Ku Bands Prototype the MMICs in foundries abroad. Insert the MMICs prototypes in Microwave Radios designed by NEC Brasil
Partners: FDTE
Financing: NEC Brasil
Sub-harmonic SSB Up Converter - 17 to 24 GHz
Conversion Loss: 10 dB; Isolation: 2LR > 35 dB; LO power level: 15 dBm; Image rejection: > 15 dB
Chip area: 1.6 x 2.7 mm²
Technology: 0.2 µm PHEMT
Foundry: GEC Marconi, UK