Microwave Components for Satellite and Terrestrial Links
Objective: Development of Integrated Microwave Circuits (MICs) and Integrated Monolithic Microwave Circuits (GaAs - MMICs) at L, C and X Bands, for application in and Satellite and Terrestrial Limks
Active Up/Down Converter – 45 MHz to 2.5 GHz
Up Conversion Gain: 11 to 22 dB; Down Conversion Gain: 1 to 22 dB; Isolation: LI > 20 dB and LR > 20 dB; LO power level: 0 dBm; RF: 45 to 2,500 MHz
Chip area: 2.55 x 1.45 mm²
Technology: 0.5 µm GaAs MESFET;
Foundry: GEC Marconi, UK
Partners: CPqD TELEBRAS
